SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREFOR

摘要

PURPOSE: A semiconductor device and a fabricating method therefor are provided to prevent a bridge without influencing the surface area of high cylindrical lower electrodes by forming a thin support pattern between the sidewalls of the cylindrical lower electrodes. CONSTITUTION: A lower interlayer dielectric(104) is formed on a semiconductor substrate(101). A plurality of lower electrodes(121a) are formed on the lower interlayer dielectric. The support pattern(109b) is interposed between the sidewalls of at least two of the lower electrodes wherein the support pattern is separated from the lower interlayer dielectric. The lower electrodes include buried contact plugs(106) penetrating the lower interlayer dielectric, electrically connected to a predetermined region of the semiconductor substrate through the buried contact plug.