MEASURING METHOD, PHOTOLITHOGRAPHY METHOD, MANUFACTURING METHOD FOR BASE MATERIAL, AND ELECTRON BEAM LITHOGRAPHY SYSTEM

摘要

PROBLEM TO BE SOLVED: To provide a measuring method, a photolithography method, a manufacturing method for base material, and an electron beam lithography system which can grasp the influence of a shape after resist development and eliminate the limit of writing precision while accurately grasping an error generated at a border part between writing fields and an error in writing position. SOLUTION: The measuring method is for measuring the precision of drawing by writing a pattern for measurement by irradiating a beam upon a base material for measurement. The method has a measurement step for measuring a 1st writing shape when respective lines are written and developed with a 2nd dosage corresponding to a nearly half of a 1st dosage so as to correspond to a writing shape when a 1st reference line is written and developed with the 1st dosage and a plurality of 2nd writing shapes obtained from respective results when two lines which are at a specified distance are written with the 2nd dosage and a plurality of patterns are written while the two lines are regarded as one set of patterns and the specified distance is varied. Further, the method includes a calculation step for calculating reference data by comparing the 1st writing shape and the 2nd writing shapes with each other according to the measurement results. COPYRIGHT: (C)2003,JPO