发明名称 Resin-encapsulated semiconductor device
摘要 A method for forming a mold-encapsulated semiconductor device includes the steps of mounting a semiconductor chip on a metallic plate having a metallic interconnect pattern thereon, encapsulating the semiconductor chip on the metallic interconnect pattern, removing the bottom of the metallic plate by etching to expose the metallic interconnect pattern, and forming external terminals on the bottom of the metallic interconnect pattern. The method reduces the thickness as well as the planar dimensions of the semiconductor device.
申请公布号 US6611063(B1) 申请公布日期 2003.08.26
申请号 US20000664061 申请日期 2000.09.18
申请人 NEC ELECTRONICS CORPORATION 发明人 ICHINOSE MICHIHIKO;TAKIZAWA TOMOKO;HONDA HIROKAZU;KATA KEIICHIROU
分类号 H01L23/28;H01L21/48;H01L21/56;H01L21/60;H01L21/68;H01L23/12;H01L23/31;H01L23/495;H01L23/498;(IPC1-7):H01L23/48;H01L23/52;H01L29/40 主分类号 H01L23/28
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