发明名称 Method of controlling the formation of metal layers
摘要 The present invention is directed to a method of controlling the formation of metal layers. In one illustrative embodiment, the method comprises depositing a layer of metal above a structure, irradiating at least one area of the layer of metal, and analyzing an x-ray spectrum of x-rays leaving the irradiated area to determine a thickness of the layer of metal. In further embodiments of the present invention, a plurality of areas, and in some cases at least five areas, of the layer of metal are irradiated. The layer of metal may be comprised of, for example, titanium, cobalt, nickel, copper, tantalum, etc.
申请公布号 US6610181(B1) 申请公布日期 2003.08.26
申请号 US20010845952 申请日期 2001.04.30
申请人 ADVANCED MICRO DEVICES, INC. 发明人 BESSER PAUL R.;KING PAUL L.;KIM SUSAN
分类号 C23C8/00;C23C14/54;C23C16/52;C23C26/00;(IPC1-7):C23C14/34;H05H1/24;B05D1/36;H01L21/336 主分类号 C23C8/00
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