发明名称 |
Ferroelectric random access memory |
摘要 |
A ferroelectric random access memory is disclosed, which comprises a cell array including a plurality of memory cells each having a ferroelectric memory device and a cell selecting transistor connected in series to the ferroelectric storage device, and imprint restricting circuit configured to restrict generation of an imprint by setting a polarization amount of a ferroelectric film of the ferroelectric memory device in the memory cell to an amount smaller than a polarization amount generated at a normal write time.
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申请公布号 |
US6611450(B2) |
申请公布日期 |
2003.08.26 |
申请号 |
US20020087837 |
申请日期 |
2002.03.05 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OOWAKI YUKIHITO;DOUMAE SUMIKO |
分类号 |
H01L27/108;G11C11/22;(IPC1-7):G11C7/00 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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