| 摘要 |
The present invention provides a method of forming a semiconductor device spacer. In the method, a gate pattern is formed on a semiconductor substrate, and a first insulation layer, a second insulation layer, and a third insulation layer are sequentially formed over substantially the entire surface of the resultant structure. The second and third insulation layers are formed of the same material under a first pressure and a second pressure higher than the first pressure, respectively, and preferably of silicon nitride, using a low pressure chemical vapor deposition (LPCVD) technique. The third and second insulation layers are sequentially, anisotropically etched until the first insulation layer is exposed, thereby forming a spacer and a second insulation pattern. The spacer is selectively removed by an isotropic etching method, to minimize the recessed extent of the second insulation pattern. The exposed first insulation layer is etched to form a first insulation pattern.
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