| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for making the diffraction grating of a laser diode. SOLUTION: The method for making a diffraction grating selectively at a specified position of a semiconductor substrate comprises a step for forming a first photosensitive film pattern being arranged at an interval corresponding to a specified grating period entirely on the upper surface of a semiconductor layer on which a diffraction grating is formed, a step for forming a diffraction grating layer by etching the semiconductor layer using the first photosensitive film pattern as an etching mask, a step for forming a mask pattern at an upper part of the diffraction grating layer except a specified diffraction grating region, a step for removing the mask pattern formed at an upper part of the diffraction grating layer, and a step for removing the diffraction grating layer at a lower part exposed by removing the mask pattern. COPYRIGHT: (C)2003,JPO
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