| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor (TFT) capable of forming an LDD structure or an off-set structure in a simple process, and easily controlling the length or impurity density. SOLUTION: In a thin film transistor, a semiconductor thin film is formed on an insulating substrate, and a gate electrode is formed through an insulating film on the semiconductor thin film. Impurity is introduced to the semiconductor thin film at the both sides of the gate electrode, a source/drain area is formed, and a low density impurity area or an offset area to which any impurity is not introduced is formed at the gate electrode side of the source/drain area. At least, the thickness of the semiconductor thin film in the low density impurity area or the offset area is formed so as to be thinner than the thickness of the semiconductor thin film of the channel area at the lower side of the gate electrode. COPYRIGHT: (C)2003,JPO
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