发明名称 Photonic bandgap materials based on silicon
摘要 Method of synthesis of photonic band gap (PBG) materials. The synthesis and characterization of high quality, very large scale, face centered cubic photonic band gap (PBG) materials consisting of pure silicon, exhibiting a complete three-dimensional PBG centered on a wavelength of 1.5 mum. This is obtained by chemical vapor deposition and anchoring of disilane into a self-assembling silica opal template, wetting of a thick silicon layer on the interior surfaces of the template, and subsequent removal of the template. This achievement realizes a long standing goal in photonic materials and opens a new door for complete control of radiative emission from atoms and molecules, light localization and the integration of micron scale photonic devices into a three-dimensional all-optical micro-chip.
申请公布号 US2003156319(A1) 申请公布日期 2003.08.21
申请号 US20020182448 申请日期 2002.12.17
申请人 JOHN SAJEEV;CHOMSKI BENJAMIN EMMANUEL;OZIN ALAN GEOFFREY;LOPEZ FERNANDEZ CEFERINO;MESEGUER RICO FRANCISCO JAVIER 发明人 JOHN SAJEEV;CHOMSKI BENJAMIN EMMANUEL;OZIN ALAN GEOFFREY;LOPEZ FERNANDEZ CEFERINO;MESEGUER RICO FRANCISCO JAVIER
分类号 G02B6/122;(IPC1-7):H01S3/00 主分类号 G02B6/122
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