发明名称 Process for fabricating a self-aligned vertical bipolar transistor
摘要 The fabrication process comprises a phase of producing a base region having an extrinsic base and an intrinsic base, and a phase of producing an emitter region comprising an emitter block having a narrower lower part located in an emitter window provided above the intrinsic base. Production of the extrinsic base comprises implantation of dopants, carried out after the emitter window has been defined, on either side of and at a predetermined distance dp from the lateral boundaries of the emitter window so as to be self-aligned with respect to this emitter window, and before the emitter block is formed.
申请公布号 US2003155611(A1) 申请公布日期 2003.08.21
申请号 US20030378198 申请日期 2003.03.03
申请人 STMICROELECTRONICS S.A. 发明人 CHANTRE ALAIN;MARTY MICHEL;BAUDRY HELENE
分类号 H01L29/73;H01L21/205;H01L21/302;H01L21/3065;H01L21/331;H01L29/737;(IPC1-7):H01L29/76 主分类号 H01L29/73
代理机构 代理人
主权项
地址