| 摘要 |
<p>Under an oxide film (301), a multilayer interconnection comprising a layer B composed of a metal interconnection (302) and an interlayer insulating film (303) and a layer D composed of a metal interconnection (304) extending in a direction perpendicular to the metal interconnection (302) and an interlayer insulating film (305) is formed. Assuming that the s-polarized light of the incident light is reflected from the interface of the layer B, and the p-polarized light is reflected from the interface of the layer D, the amplitude reflectances Rs and Rp are calculated, and tan Ψ of a function of the amplitude ratio Ψ between the s- and p-polarized components and cos Δ of a function of the phase difference Δ between them are calculated, thereby creating reference data. The thickness (tA) of the oxide film (301) is determined on the basis of the reference data. Thus, the thickness and cross section shape of the film formed on the multilayer interconnection are measured in a nondestructive manner with high throughput.</p> |
