发明名称 IN-LINE DEPOSITION PROCESSES FOR CIRCUIT FABRICATION
摘要 In one embodiment, the invention is directed to aperture mask deposition techniques using aperture mask patterns formed in one or more elongated webs of flexible film. The techniques involve sequentially depositing material through mask patterns formed in the film to define layers, or portions of layers, of the circuit. A deposition substrate can also be formed from an elongated web, and the deposition substrate web can be fed through a series of deposition stations. Each deposition station may have an elongated web formed with aperture mask patterns. The elongated web of mask patterns feeds in a direction perpendicular to the deposition substrate web. In this manner, the circuit creation process can be performed in-line. Moreover, the process can be automated to reduce human error and increase throughput.
申请公布号 WO03069016(A2) 申请公布日期 2003.08.21
申请号 WO2003US01821 申请日期 2003.01.21
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 BAUDE, PAUL, F.;FLEMING, PATRICK, R.;HAASE, MICHAEL, A.;KELLEY, TOMMIE, W.;MUYRES, DAWN, V.;THEISS, STEVEN, D.
分类号 C23C14/04;C23C14/56;G03F7/12;H01L21/203;H01L21/285;H01L21/31;H01L21/336;H01L29/786;H01L51/05 主分类号 C23C14/04
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