Production of a semiconductor component used in the production of substrate-less luminescent diodes comprises separating a semiconductor layer from a substrate by irradiating with a laser beam having a plateau-shaped spatial beam profile

摘要

Production of a semiconductor component comprises separating a semiconductor layer (2) from a substrate (1) by irradiating with a laser beam having a plateau-shaped spatial beam profile. Preferred Features: The laser beam is produced an excimer laser containing a rare gas-halogen compound, especially XeF, XeBr, KrCl or KrF as laser-active medium. The laser beam has a rectangular or trapezoidal spatial beam profile. The laser beam has a wavelength of 200-400 nm.