发明名称 |
Method of patterning ferroelectric layers |
摘要 |
A method for structuring ferroelectric layers on semiconductor substrates retains or regenerates the adherence and breakdown voltage resistance of the ferroelectric layer, which is especially significant for producing storage capacitors in large-scale integrated FeRAM and DRAM memory components. The addition of H2O or O2 results principally in the recovery of the electrostatic breakdown strength of the ferroelectric layer, which is of importance in particular when the ferroelectric serves as a dielectric of a storage capacitor and has to withstand electric fields of 5-10x106 V/m without a significant leakage current.
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申请公布号 |
US2003157734(A1) |
申请公布日期 |
2003.08.21 |
申请号 |
US20030364819 |
申请日期 |
2003.02.11 |
申请人 |
ENGELHARDT MANFRED;HARTNER WALTER;HINTERMAIER FRANK;SCHINDLER GUNTHER;WEINRICH VOLKER |
发明人 |
ENGELHARDT MANFRED;HARTNER WALTER;HINTERMAIER FRANK;SCHINDLER GUNTHER;WEINRICH VOLKER |
分类号 |
H01L21/02;H01L21/311;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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地址 |
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