发明名称 |
METHOD FOR PRODUCING GERMANIUM NANOISLANDS ON VICINAL SILICON SURFACE |
摘要 |
FIELD: nanoelectronics. SUBSTANCE: proposed method intended to produce structures with germanium nanoislands (quantum points) on vicinal silicon (III) surface for developing superhigh-speed semiconductor devices as well as some optoelectronic devices around them includes annealing of vicinal surface of silicon substrate during preepitaxial preparation stage and in the course of evaporation by passing dc current in direction perpendicular to front of vicinal silicon edge. EFFECT: enhanced density and ordering, as well as improved structure of germanium nanoislands on vicinal silicon surface. 1 cl, 2 dwg
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申请公布号 |
RU2210836(C1) |
申请公布日期 |
2003.08.20 |
申请号 |
RU20020103763 |
申请日期 |
2002.02.11 |
申请人 |
RJAZANSKAJA GOSUDARSTVENNAJA RADIOTEKHNICHESKAJA AKADEMIJA |
发明人 |
ZAKURDAEV I.V.;SADOF'EV S.JU. |
分类号 |
H01L21/203 |
主分类号 |
H01L21/203 |
代理机构 |
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