发明名称 METHOD FOR ONE-SHOT REMOVAL OF RESIST MEMBER AND SIDEWALL PROTECTION LAYER
摘要 <p>The present invention is intended to collectively remove unnecessary resist material and side wall protective film after dry etching by side wall protection process, making it possible to simplify the process for the preparation of semiconductors, etc. The process according to the present invention comprises removing unnecessary resist material (3) left behind after dry etching by side wall protection process with a resist pattern (3) present on a semiconductor substrate (2) as a mask and side wall protective film (4) deposited on the side wall (22) of pattern, said process comprising the steps of applying an pressure-sensitive adhesive sheet (1) to said substrate (2), heating the pressure-sensitive adhesive layer (1) under pressure so that the pressure-sensitive adhesive (11) comes in contact with up to the side wall (4) of pattern, and then collectively peeling said pressure-sensitive adhesive sheet (1), said resist material (3) and said side wall protective film (4) off said substrate. <IMAGE></p>
申请公布号 EP0989465(B1) 申请公布日期 2003.08.20
申请号 EP19980901544 申请日期 1998.02.06
申请人 NITTO DENKO CORPORATION 发明人 TOYODA, EIJI;NAMIKAWA, MAKOTO;HASHIMOTO, KOUICHI;SHIRAI, SELICHIRO
分类号 C09J7/02;C09J5/00;G03F7/34;H01L21/02;H01L21/027;H01L21/302;H01L21/3065;H01L21/3213;(IPC1-7):G03F7/34;H01L21/306;G03F7/42 主分类号 C09J7/02
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