MEMORY DEVICE USING CARBON NANO TUBE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A memory device using a carbon nano tube and a method for manufacturing the same are provided to be capable of preventing the increase of resistance due to the downsized memory device and reducing heat loss, power dissipation, and the leakage of electric charge. CONSTITUTION: A memory device is provided with a silicon substrate(11), a source and drain electrode(15,17) formed and spaced apart from each other on the upper portion of the silicon substrate, a carbon nano tube(21) formed between the source and drain electrode for being used as an electron transfer channel, a memory cell(23) located at the upper portion of the carbon nano tube for storing electrons flowed from the carbon nano tube, and a gate electrode(19) located on the upper portion of the memory cell for controlling the quantity of electric charge stored in the memory cell.