| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for electrolytic plating, which can easily plate a seed layer, an electrolytic plating apparatus, and an electrolytic plating system. SOLUTION: The electrolytic plating system 1 comprises an ozone gas introduction system 44, a dry cleaning device DW provided with an ultraviolet- generating section 65, and an electrolytic plating apparatus M for passing an electric current to a wafer W and plating it. The dry cleaning device DW removes an organic substance adhering to the seed layer 58 of the wafer W with ozone and ultraviolet ray, and subsequently the electrolytic plating apparatus M plates the seed layer 58. COPYRIGHT: (C)2003,JPO
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