发明名称 Dry etching method and semiconductor device manufacturing method
摘要 In a method for dry-etching a coating by use of reactive gas which is activated, a second insulating layer containing carbon atoms which is formed on a first insulating layer containing carbon atoms is ashed by use of a gas containing carbon atoms and at least one of oxygen atoms, nitrogen atoms and hydrogen atoms. By using the above gas, the second insulating layer containing carbon atoms which is formed on the first insulating layer which is an underlying layer can be efficiently ashed and removed without removing carbon atoms in the side surface of the grooves formed in the first insulating layer and etching the side surface thereof. Thus, the side surface of the groove formed in the first insulating layer will not be modified or deformed.
申请公布号 US6607986(B2) 申请公布日期 2003.08.19
申请号 US20000739905 申请日期 2000.12.20
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SETA SHOJI;ICHINOSE HIDEO
分类号 H01L21/302;H01L21/283;H01L21/3065;H01L21/311;H01L21/441;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/302 主分类号 H01L21/302
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