Automatic delay technique for early read and write operations in synchronous dynamic random access memories

摘要

An automatic delay technique for early "read" and "write" memory access operations in synchronous dynamic random access memory ("SDRAM") devices and those integrated circuit devices employing embedded SDRAM arrays. A circuit and method is provided which controls the internal column select ("Yi") and data signals such that the column address strobe ("/CAS") signal is allowed to go "active" in advance of that otherwise possible in conjunction with conventional SDRAM arrays. In an exemplary embodiment, the column select signals ("read" or "write") are delayed until either the corresponding, pre-decoded column address signal or the respective column clock signal is valid, whichever occurs later.