| 摘要 |
PURPOSE: A nitride semiconductor substrate and a method for manufacturing the same are provided to be capable of reducing inner stress and decreasing defect density by forming an empty space between a seed layer and a III-V group nitride semiconductor thin film. CONSTITUTION: A nitride semiconductor substrate is provided with a hetero substrate(50), the first nitride semiconductor layer formed on the upper portion of the hetero substrate, the second nitride semiconductor layer(53) formed on the lateral and upper portion of the first nitride semiconductor layers, and a plurality of empty spaces(54) formed between the first nitride semiconductor layers and the second nitride semiconductor layer. Preferably, an AlGaN thin film is used as the first and second nitride semiconductor layer, and the hetero substrate is made of one selected from a group consisting of sapphire, silicon carbide, and silicon. |
