发明名称 |
Selective method to form roughened silicon |
摘要 |
A method of forming silicon storage nodes on silicon substrates, wherein the silicon storage nodes have a roughened surface, which does not result in deposition of silicon atoms over the entire surface of the silicon substrate and which does not require the silicon storage nodes to be comprised of amorphous silicon prior to being subjected to the surface-roughening treatment.
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申请公布号 |
US6607966(B2) |
申请公布日期 |
2003.08.19 |
申请号 |
US20020039022 |
申请日期 |
2002.01.02 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
FIGURA THOMAS A.;WU ZHIQIANG;LI LI |
分类号 |
H01L21/02;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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