| 摘要 |
PROBLEM TO BE SOLVED: To provide, at low costs, a bipolar transistor having the excellent high frequency characteristic by forming a SIC layer having the predetermined retro-grade profile with the simplified process and by reducing a junction capacitance between the base and collector in the method of manufacturing the bipolar transistor including the SIC layer. SOLUTION: In the emitter aperture window forming process, immediately after a SiO<SB>2</SB>layer is removed with the dry etching method using a resist mask, the phosphorus ion is implanted into an Si substrate through the IBDP layer, SiO<SB>2</SB>layer and Si/SiGe layer using the same resist mask. COPYRIGHT: (C)2003,JPO
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