| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that fluctuations of a threshold voltage and mobility of a transistor are caused by factors such as manufacturing process, the fluctuations of a gate insulation film caused due to differences of the substrates used, and the fluctuation of the state of crystallization of a channel forming region. SOLUTION: This electric circuit is arranged so as to hold a voltage between a gate and a source of a specific transistor having both electrodes of capacity element, and the electric circuit is provided with the function that a potential difference between both electrodes of capacity element can set to become a threshold voltage of the specific transistor. COPYRIGHT: (C)2003,JPO
|
