| 摘要 |
PROBLEM TO BE SOLVED: To form a high fusing point metal nitride as a barrier metal of wiring at a low temperature and a low resistance, and moreover to prevent reaction products at a film growth from adhering to the inside of a chamber, and to perform all the steps under reduced pressure from the removal of a natural oxide film to the growth of a contact metal and a barrier metal, in a method for manufacturing a semiconductor device having a step of growing the high fusing point metal nitride as a barrier metal material. SOLUTION: Source gas containing a high fusing point metal and at least one of an alkyl amino compound and an alkyl azide compound for reducing and nitriding the source gas are used as reduction gas and a nitrogen source, and a step of forming a high fusing point metal nitride film is contained by chemical vapor deposition. COPYRIGHT: (C)2003,JPO
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