| 摘要 |
PROBLEM TO BE SOLVED: To provide a data write method for a semiconductor device in which a data holding characteristic is improved. SOLUTION: A N-channel type MOS transistor 11 of which a gate electrode and a drain electrode are connected commonly is arranged between a low level side of a sense amplifier 2 connected to bit lines (BL, /BL) and ground voltage Vss, a high level of a word line WL can be set highly by the prescribed voltage by raising voltage of the low level side of the sense amplifier 2 more highly than the ground voltage by the prescribed voltage. COPYRIGHT: (C)2003,JPO
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