| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element exhibiting excellent emission efficiency by eliminating the effect of piezoelectric field sufficiently while sustaining good crystallinity of an active layer. <P>SOLUTION: A quantum well active layer has a multilayer structure of a barrier layer undoped region (In<SB>0.02</SB>Ga<SB>0.98</SB>N layer 702), a well layer (undoped In<SB>0.2</SB>Ga<SB>0.8</SB>N layer 703) and a barrier layer n-type region (n-type In<SB>0.02</SB>Ga<SB>0.98</SB>N layer 701), formed sequentially. Concentration of Si is set not higher than 5×10<SP>18</SP>cm<SP>-3</SP>in the barrier layer n-type region. <P>COPYRIGHT: (C)2003,JPO |
