| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for preventing destruction of a current sense element by an excess voltage, the current sense element being incorporated in an insulation gate type transistor to prevent an excess current. SOLUTION: In a semiconductor device provided with a first IGBT 1 controlling a main current and a second IGBT 2 preventing the excess current of a first IGBT 1, a first diode 9 and a second diode 10 are inversely connected in series between a first emitter 5 and a second emitter 6 so as to be parallel to a sense resistor 8. In this case, a breakdown voltage to the opposite direction voltage of both diodes 9 and 10 is set to a value lower than a breakdown voltage between both emitters 5 and 6 and higher than the upper limit value of a sense voltage, and thus, the destruction of the second IGBT 2 by the excess voltage is surely prevented while effectively preventing the excess current at the first IGBT 1. COPYRIGHT: (C)2003,JPO |
