发明名称 HALOGEN-RESISTANT, ANODIZED ALUMINUM FOR USE IN SEMICONDUCTOR PROCESSING APPARATUS
摘要 <p>We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330 °C ; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.</p>
申请公布号 WO2003066920(P1) 申请公布日期 2003.08.14
申请号 US2003003558 申请日期 2003.02.04
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