SEMICONDUCTOR LASER DIODE AND METHOD FOR FORMING FACET THEREOF

摘要

PURPOSE: A semiconductor laser diode and a method for forming a facet thereof are provided to form a diffusion layer to the facet of the semiconductor laser diode and remove a natural oxide layer, and prevent a degradation phenomenon by depositing a ZnS layer on a facet of the semiconductor laser diode. CONSTITUTION: A semiconductor laser diode includes a ZnS layer(60,61) and a Zn-diffusion layer(65,66). The ZnS layer is formed on an optical output facet of a semiconductor laser diode(50) having a stacking structure including an active layer(51) for radiating a laser beam. The Zn diffusion layer is diffused to the inside of the semiconductor laser diode adjacent to the ZnS layer. A GaSx layer(63,64) is formed between the ZnS layer and the Zn diffusion layer. The thickness of the Zn diffusion layer adjacent to the active layer is thicker than the thickness of the Zn diffusion layer formed on a stacking structure of the semiconductor laser diode.