EXPOSURE MASK PATTERN FORMING METHOD, EXPOSURE MASK PATTERN, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

A method for forming an exposure mask pattern wherein edge division points (P) are given to the edges of a design pattern (1) at predetermined intervals and the positions of the edges are corrected for each of the edge segments defined by dividing the edges. Rectangles (10, 11) having long sides which are pairs of opposed sides of the design pattern (1) are created in the design pattern (1). The rectangles (10, 11) are formed in portions where distances W1, W2 between the long sides of the design pattern (1) are within a predetermined distance W0. New division points (P(P1)) are given to the long sides at predetermined intervals t starting with the two starting points (P0) which are corners common to the short sides of the rectangles (10, 11). Thus, the exposure mask pattern used for lithography is simplified, and the accuracy of transfer pattern formation is improved.