发明名称 |
Method for manufacturing light-emitting device using a group lll nitride compound semiconductor |
摘要 |
A method for manufacturing a light-emitting device which using group III nitride group semiconductors and a quantum well structure, comprising forming a well layer (e.g. an InGaN layer), forming a cap layer on the well layer, the cap layer having almost the same compositions as the well layer at a temperature similar to that at which the well layer was formed. Further, and the cap layer is formed at a crystal growth rate which is faster than the crystal growth rate of the well layer and removing the cap layer using a thermal cracking (or decomposition) process during the temperature ramp up associated with the formation of the next group III nitride compound semiconductor layer. After the cap layer is removed, the group III nitride compound semiconductor layer is formed on the exposed well layer.
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申请公布号 |
US2003153112(A1) |
申请公布日期 |
2003.08.14 |
申请号 |
US20030374043 |
申请日期 |
2003.02.27 |
申请人 |
WATANABE HIROSHI;SHIBATA NAOKI |
发明人 |
WATANABE HIROSHI;SHIBATA NAOKI |
分类号 |
C30B29/38;C30B29/40;H01L21/205;H01L33/00;H01L33/06;H01L33/32;H01S5/34;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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