SURFACE TREATING DEVICE AND SURFACE TREATING METHOD

摘要

Installed in a vacuum chamber (1) is a table (2) for supporting semiconductor wafer (W), which is a treatment subject substrate, with an electron beam irradiation mechanism (6) mounted on the ceiling of the vacuum chamber (1) for generating electron beams (EB). The table (2) is adapted to be vertically moved by a lifting/lowering device (3), allowing the distance between the electron beam irradiating mechanism (6) and the semiconductor wafer (W) to be set at a desired value. This makes it possible to effect a uniform satisfactory treatment over the entire surface of the treatment subject substrate.