METHODS OF TREATING A SILICON CARBIDE SUBSTRATE FOR IMPROVEDEPITAXIAL DEPOSITION

摘要

A method is disclosed for treating a silicon carbide substrate for improved epitaxial deposition thereon and for use as a precursor in the manufacture o f devices such as light emitting diodes. The method includes the steps of implanting dopant atoms of a first conductivity type into the first surface of a conductive silicon carbide wafer having the same conductivity type as the implanting ions at one or more predetermined dopant concentrations and impla nt energies to form a dopant profile, annealing the implanted wafer, and growin g an epitaxial layer on the implanted first surface of the wafer.