| 摘要 |
An unbalanced magnetron rotatable about the back of a sputtering target (14) arid including a nested magnetron part having an outer magnetic pole (54) of a first magnetic polarity surrounding an inner magnetic pole (54) of an opposed second magnetic polarity and an auxiliary magnet increasing the unbalance and adjusting the uniformity o f sputtering. fu a first embodiment, the auxiliary magnet (56) is vertically magnetized and placed on an opposite side of the rotation axis from the major portion of the nested magnetron part. This embodiment most strongly affects the vertical magnetic field distribution near the wafer and can produce a more uniform magnetic field at the wafer. In a second embodiment, the auxiliary magnet is horizontally magnetized and placed between the inner pole and the portion of the outer pole near the target periphery. This embodiment most strongly affects the sputtering erosion pattern near the target periphery. The two embodiments can be combined. |
