| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To precisely measure the concentration of a specific impurity in a semiconductor wafer by a simple infrared absorption difference spectrum without necessitating a discrete reference in an estimating method for a semiconductor crystal. <P>SOLUTION: After preparing one or more semiconductor crystals cut out from a semiconductor base crystal for measuring infrared spectra, the semiconductor crystals are heated at different temperatures. Thereafter, infrared absorption spectra of the semiconductor crystals are measured, and the intensity of an absorption peak corresponding to a defect caused by the specific impurity is obtained from the infrared absorption difference spectrum. <P>COPYRIGHT: (C)2003,JPO</p> |
