发明名称 |
Voltage booster circuit and semiconductor device for incorporating same |
摘要 |
A boost voltage circuit includes a plurality of N channel type MOS transistors connected between an input terminal and an output terminal in series, wherein one electrode of each of the N channel type MOS transistors is connected to each of external terminals to which a capacitor can be connected, to generate a boost voltage. A plurality of P channel type MOS transistors are respectively connected to each of the N channel type MOS transistors in parallel. Thereby, a boost voltage circuit with improved stability is provided so that the boost voltage circuit is started without increase of consumption current.
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申请公布号 |
US6605932(B2) |
申请公布日期 |
2003.08.12 |
申请号 |
US20010017414 |
申请日期 |
2001.12.18 |
申请人 |
OKI ELECTRIC INDUSTRY CO., LTD. |
发明人 |
SATO HISATAKE |
分类号 |
G11C11/407;H02M3/07;(IPC1-7):G05F3/16 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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