| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a single crystal silicon ingot from varying sized pieces of polycrystalline silicon source material according to a Czochralski method. SOLUTION: The method for forming the single crystal silicon ingot includes a process for placing a generally polygonal-shaped concentric array of rod- shaped polycrystalline silicon pieces having obliquely cut ends into a crucible on the bottom. The method of stacking the polycrystalline silicon pieces in the crucible allows for a denser packing of silicon in the crucible, can be accomplished in a quicker time than a conventional packing method, and has the potential for less damage to the crucible bottom, when compared to standard packing methods using a size assortment of irregular shaped silicon pieces. COPYRIGHT: (C)2003,JPO
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