| 发明名称 |
Process for etching gallium nitride compound based semiconductors |
| 摘要 |
A method for wet etching a gallium nitride compound-based semiconductor is disclosed. The method uses an aqueous solution containing an oxidizing agent such as peroxydisulfate ions. The sample and solution are irradiated with visible or ultraviolet light in order to promote the etching.
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| 申请公布号 |
US6605548(B1) |
申请公布日期 |
2003.08.12 |
| 申请号 |
US20000579497 |
申请日期 |
2000.05.30 |
| 申请人 |
NATIONAL RESEARCH COUNCIL OF CANADA |
发明人 |
BARDWELL JENNIFER |
| 分类号 |
H01L21/306;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/306 |
| 代理机构 |
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