发明名称 |
Method of creating hydrogen isotope reservoirs in a semiconductor device |
摘要 |
The present invention provides a method of manufacturing a semiconductor device that includes incorporation of a hydrogen isotope at a relatively high processing temperature during gate oxidation or polysilicon gate electrode deposition to maximize incorporation of hydrogen isotope at interfaces deliberately created during oxidation (such as graded oxidation) as multilayered poly/alpha-silicon deposition process.
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申请公布号 |
US6605529(B2) |
申请公布日期 |
2003.08.12 |
申请号 |
US20010853317 |
申请日期 |
2001.05.11 |
申请人 |
AGERE SYSTEMS INC. |
发明人 |
CHETLUR SUNDAR;MCKINLEY JENNIFER M.;PATEL MINESH A.;ROY PRADIP K.;ZHOU JONATHAN ZHONG-NING |
分类号 |
H01L21/28;H01L21/30;H01L29/49;H01L29/51;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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