METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE,申请号KR20030006093-传众专利搜索

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发明名称	METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE
摘要
申请公布号	KR20030066387(A)	申请公布日期	2003.08.09
申请号	KR20030006093	申请日期	2003.01.30
申请人		发明人
分类号	H01L21/20;H01L21/205;H01L21/265;H01L21/322	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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