发明名称 ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To provide an electrostatic protection circuit which can surely protect an inner circuit against static electricity having a high build-up speed. SOLUTION: An electrostatic protection circuit 1 for protecting an inner circuit 4 against static electricity applied to an input terminal 2 has a ground terminal, a first transistor Q1 wherein a collector is connected to the input terminal 2 and an emitter is connected to a ground terminal and a second transistor Q2 wherein an emitter of a transistor with a collector and a base connected is connected to the input terminal 2 and a connection point between a collector and a base is connected to a base of the first transistor Q1. It further has a diode D1 wherein a cathode is connected to the input terminal 2 and an anode is connected to a ground terminal. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003224199(A) 申请公布日期 2003.08.08
申请号 JP20020023849 申请日期 2002.01.31
申请人 MITSUMI ELECTRIC CO LTD 发明人 DOBASHI NAGAYOSHI;SHIMADA HARUO;MABUCHI SHIGENORI
分类号 H01L27/04;H01L21/822;(IPC1-7):H01L21/822 主分类号 H01L27/04
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