发明名称 |
ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To provide an electrostatic protection circuit which can surely protect an inner circuit against static electricity having a high build-up speed. SOLUTION: An electrostatic protection circuit 1 for protecting an inner circuit 4 against static electricity applied to an input terminal 2 has a ground terminal, a first transistor Q1 wherein a collector is connected to the input terminal 2 and an emitter is connected to a ground terminal and a second transistor Q2 wherein an emitter of a transistor with a collector and a base connected is connected to the input terminal 2 and a connection point between a collector and a base is connected to a base of the first transistor Q1. It further has a diode D1 wherein a cathode is connected to the input terminal 2 and an anode is connected to a ground terminal. COPYRIGHT: (C)2003,JPO
|
申请公布号 |
JP2003224199(A) |
申请公布日期 |
2003.08.08 |
申请号 |
JP20020023849 |
申请日期 |
2002.01.31 |
申请人 |
MITSUMI ELECTRIC CO LTD |
发明人 |
DOBASHI NAGAYOSHI;SHIMADA HARUO;MABUCHI SHIGENORI |
分类号 |
H01L27/04;H01L21/822;(IPC1-7):H01L21/822 |
主分类号 |
H01L27/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|