| 摘要 |
PROBLEM TO BE SOLVED: To provide a system and a method for vapor-depositing a thin dielectric film for a dielectric of a gate and the other IC device. SOLUTION: The method comprises a step of supplying a substrate into a hot wall quick heat treatment chamber, a step of adjusting the pressure of the chamber from about 0.01 to 10 Torr, and a step of reacting a chlorine- containing silicon precursor with ammonia to form a silicon nitride film on the surface of the substrate. The precursor may be selected from a group composed of an SiH<SB>2</SB>Cl<SB>2</SB>, SiH<SB>3</SB>Cl, SiHCl<SB>3</SB>, SiCl<SB>4</SB>, and Si<SB>2</SB>Cl<SB>6</SB>. The precursor is preferably SiH<SB>2</SB>Cl<SB>2</SB>(dichlorosilane). The ratio of the precursor to the ammonia is preferably in a range of about 1:3 to 1:10. COPYRIGHT: (C)2003,JPO
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