| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a capacitor element having excellent characteristics by suppressing deformation of a conductive barrier layer due to oxidation expansion stress, and its fabricating method. <P>SOLUTION: The semiconductor device comprises a semiconductor substrate 101 on which a semiconductor active element 105 is formed, an interlayer insulation film 106 formed on the semiconductor substrate 101 and having an opening reaching the semiconductor active element 105, a conductive plug 107 formed to fill the opening, conductive barrier layers 108a and 109a formed on the conductive plug 107 and the interlayer insulation film 106, and a capacitor element 113 formed on the conductive barrier layers 108a and 109a wherein at least the interlayer insulation film 106 directly under the conductive barrier layer 108a is composed of an anti-deformation film 106b for preventing deformation of the conductive barrier layer 108a due to oxidation expansion. <P>COPYRIGHT: (C)2003,JPO |
