发明名称 SEMICONDUCTOR WAFER SURFACE TREATMENT TECHNIQUE
摘要 PROBLEM TO BE SOLVED: To flatten unevenness of a surface of a wafer which is just cut off. SOLUTION: A column composed of silicon Si or germanium Ge is cut thinly by a blade, and a wafer is formed. Temperature of the wafer is increased up to the melting point of the wafer by heating with a heating wire or fuel, and the unevenness of the wafer which is just cut off is made flat. COPYRIGHT: (C)2003,JPO
申请公布号 JP2003224089(A) 申请公布日期 2003.08.08
申请号 JP20020058027 申请日期 2002.01.28
申请人 KAWAZOE MITSUHIRO 发明人 KAWAZOE MITSUHIRO
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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