发明名称 Mask for manufacturing semiconductor device and method of manufacture thereof
摘要 The present invention relates to a microminiaturization technique to achieve the miniaturization and higher integration of IC chip and to the improvement of a mask used in its manufacturing process. In other words, the phases of lights transmitted through the mask is controlled within one mask pattern. Specifically, a transparent film is formed in such a manner that it covers a mask pattern along a pattern formed by magnifying or demagnifying the mask pattern or otherwise a groove is formed in a mask substrate. A phase difference of 180° is generated between the lights transmitted through the mask substrate and the transparent film or the groove, causing interference with each light to offset each other. Therefore, the pattern transferred onto a wafer has an improved resolution, being used in the invention.
申请公布号 US2003148221(A1) 申请公布日期 2003.08.07
申请号 US20030361699 申请日期 2003.02.11
申请人 OKAMOTO YOSHIHIKO 发明人 OKAMOTO YOSHIHIKO
分类号 G03F1/08;G03F1/00;G03F7/20;H01L21/027;H01L21/30;(IPC1-7):G03C5/00 主分类号 G03F1/08
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