发明名称 |
Planarization method using anisotropic wet etching |
摘要 |
A planarization method using anisotropic etching can be applied to planarize an insulating layer with an uneven surface on a substrate. H2SO4, H3PO4, HF and H2O are mixed to form an etching solution. The substrate is placed into the etching solution to make the etching solution pass the surface of the insulating layer at a flow rate to etch the insulating layer. After a period of etching time, the insulating layer with a more planar surface can be obtained.
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申请公布号 |
US2003146190(A1) |
申请公布日期 |
2003.08.07 |
申请号 |
US20020067260 |
申请日期 |
2002.02.07 |
申请人 |
TSAI WEN-BIN;CHANG CHING-YU;WU CHUN-PEI;CHEN HUEI-HUANG;PAN SAMUEL C. |
发明人 |
TSAI WEN-BIN;CHANG CHING-YU;WU CHUN-PEI;CHEN HUEI-HUANG;PAN SAMUEL C. |
分类号 |
H01L21/3105;H01L21/311;(IPC1-7):C23F1/00;B44C1/22;C03C15/00;C03C25/68 |
主分类号 |
H01L21/3105 |
代理机构 |
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