| 发明名称 |
COMPENSATION OF A BIAS MAGNETIC FIELD IN A STORAGE SURFACE OF A MAGNETORESISTIVE STORAGE CELL |
| 摘要 |
The present invention relates to an arrangement for compensating a bias magnetic field in a storage surface (1) of a magnetoresistive storage cell (6) provided in a semiconductor device (7). Said invention also relates to a method for compensating such a bias field. |
| 申请公布号 |
WO03025945(A3) |
申请公布日期 |
2003.08.07 |
| 申请号 |
WO2002DE03120 |
申请日期 |
2002.08.26 |
| 申请人 |
INFINEON TECHNOLOGIES AG;BANGERT, JOACHIM |
发明人 |
BANGERT, JOACHIM |
| 分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;H01L43/12 |
主分类号 |
G11C11/15 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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