PROCESS FOR TUNGSTEN DEPOSITION BY PULSED GAS FLOW CVD

摘要

Embodiments of the present invention relate to a process of forming a nucleation layer on a substrate disposed in a processing chamber. One embodiment includes introducing one or more pulses of process gases, e.g., each pulse includes a hydrogen-containing gas and a tungsten-containing gas. The hydrogen-containing gas and the tungsten-containing gas can be removed from the processing chamber between the pulses by flowing a purge gas therebetween and/or pumping the chamber.