| 发明名称 |
Flash memory device and fabrication process thereof, method of forming a dielectric film |
| 摘要 |
A fabrication process of a flash memory device includes microwave excitation of high-density plasma in a mixed gas of Kr and an oxidizing gas or a nitriding gas. The resultant atomic state oxygen O* or hydrogen nitride radicals NH* are used for nitridation or oxidation of a polysilicon electrode surface. It is also disclosed the method of forming an oxide film and a nitride film on a polysilicon film according to such a plasma processing. |
| 申请公布号 |
US2003148629(A1) |
申请公布日期 |
2003.08.07 |
| 申请号 |
US20030359714 |
申请日期 |
2003.02.07 |
| 申请人 |
OHMI TADAHIRO;SUGAWA SHIGETOSHI |
发明人 |
OHMI TADAHIRO;SUGAWA SHIGETOSHI |
| 分类号 |
C23C8/02;C23C8/36;H01L21/31;H01L21/3105;H01L21/314;H01L21/316;H01L21/318;H01L21/336;H01L21/8238;H01L21/8247;H01L27/105;H01L27/115;H01L29/423;H01L29/792;(IPC1-7):H01L21/31 |
主分类号 |
C23C8/02 |
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